Caractérisation d'un transistor FDSOI à basse température

Details

Supervisors

Flandre, Denis ; Raskin, Jean-Pierre

Faculty

Ecole polytechnique de Louvain

Degree label

Master [120] : ingénieur civil électricien

Abstract

enDuring years the size of the transistors has been reduced one generation at a time, in order to improve the performance of the circuits. However, the transistors have reached such small dimensions that some of the assumptions that had originally been made about the electronic transport inside the transistor had to be reviewed. One of the ways to increase the performance of the transistors would be to operate at low temperatures. The goal of this work will be to perform a complete characterization of a transistor at low temperature, in order to observe its behavior at 77K.